Strain-Engineered MOSFETs

Discover the cutting-edge world of semiconductor technology in "Strain-Engineered MOSFETs" by C. K. Maiti. Published in 2017 by Taylor & Francis Ltd, this informative paperback spans 320 pages, delving into the innovative applications of strain-engineered MOSFETs. Maiti compiles the latest advancements in utilizing high-mobility substrates, including SiGe, strained-Si, germanium-on-insulator, and III-V semiconductors, providing a comprehensive understanding of their impact on modern electronics. Whether you're a student, researcher, or industry professional, this book offers valuable insights into both theoretical concepts and practical implementations of MOSFET technology. Enhance your knowledge and keep pace with the forefront of semiconductor research by adding "Strain-Engineered MOSFETs" to your collection today!